Spectroscopic Ellipsometry and DUV-NIR Reflection/Transmission Spectrophotometry
The FilmTek™ 3000 SE metrology system is engineered for unparalleled versatility and performance, and is particularly well suited for measurement of thin absorbing films on transparent substrates. The FilmTek™ 3000SE combines spectroscopic ellipsometry, DUV reflectometry, and transmission measurement capabilities allowing for the simultaneous measurement of film thickness, refractive index, and extinction coefficient.
FilmTek™ 3000 SE can be further configured to meet more specific measurement needs. Addition of the polarimetry option combines spectroscopic reflection, transmission, and polarimetry measurements for the accurate and simultaneous determination of optical constants and birefringence.
Our advanced rotating compensator design allows for precision and accuracy throughout the full range of delta (Δ), including near 0° and 180°. This allows for optimal performance when measurements are not possible near the Brewster condition, a feature essential for accurate measurement of very thin films on silicon or glass substrates.
Measurement is efficient and easy. Thousands of wavelengths are simultaneously collected in seconds, and the integrated auto-focus feature eliminates the tedious task of manual sample alignment required by comparable ellipsometers.
The FilmTek™ 3000 SE is a fully-integrated package, paired with advanced material modeling software to make even the most rigorous of measurement tasks reliable and intuitive.
Key Features:
- Spectroscopic ellipsometry with rotating compensator design (300nm-1700nm)
- Spectroscopic reflection (190nm-1700nm) of polarized light at multiple angles
- Transmission measurement
- Measures film thickness and index of refraction independently
- Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology
- Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)
- Optional generalized ellipsometry (4×4 matrix generalization method) for anisotropy measurements (nx, ny, nz)
Measurement Fapabilities:
FilmTek™ 3000 SE incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of:
- Multiple layer thicknesses
- Indices of refraction [ n(λ) ]
- Extinction (absorption) coefficients [ k(λ) ]
- Energy band gap [ Eg ]
- Composition (e.g., %Ge in SiGex, % Ga in GaxIn1-xAs, %Al in AlxGa1-xAs, etc.)
- Surface roughness
- Constituent, void fraction
- Crystallinity/Amorphization (e.g., degree of crystallinity of Poly-Si or GeSbTe films)
- Film gradient
Optional Features:
- Large custom stages for flat panel display applications
- Automated sample handling
- SECS/GEM
Applications
Virtually all translucent films ranging in thickness from less than 1 angstrom to approximately 150 microns can be measured with high precision. Typical applications include:
- Flat panel display
- Dielectric materials
- Multilayer optical coatings
- Optical antireflection coatings
- Electro-optical materials
- OLED
- Solar cell
- Coated glass
- Laser mirrors
- Thin metals
Example Films
- SiOx
- SiNx
- DLC
- SOG
- Photoresist
- Polysilicon
- Polyimide
- Color dye
- Thin metals
- a-Si
- a-C:H
- ITO
- Alq3
- HIL
- BEML
- GEML
- GETL
- REML
| Technical Specifications | |
|---|---|
| Film thickness range: | 0Å to 150µm |
| Film thickness accuracy: | ±1.0Å for NIST traceable standard oxide 100Å to 1µm |
| Spectral range: | 240nm to 1700nm (240nm to 1000nm is standard) |
| Measurement spot size: | 3mm |
| Sample size: | 2mm to 500mm (150mm is standard. Larger stages upon request) |
| Spectral resolution: | 0.3-2nm |
| Light source: | Regulated deuterium-halogen lamp (2,000 hrs lifetime) |
| Detector type: | 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR) |
| Automated Stage with Auto Focus | 300mm (200mm is standard) |
| Computer: | Multi-core processor with Windows™ 10 Operating System |
| Measurement time: | ~2 sec (e.g., oxide film) |
| Performance Specifications | |||
|---|---|---|---|
| Film(s) | Thickness | Measured Parameters | Precision (1σ) |
| Oxide / Si | 0-1000 Å | t | 0.03 Å |
| 1000-500,000 Å | t | 0.005% | |
| 1000 Å | t , n | 0.2 Å / 0.0001 | |
| 15,000 Å | t , n | 0.5 Å / 0.0001 | |
| 150,000 Å | t , n | 1.5 Å / 0.00001 | |
| Photoresist / Si | 200-10,000 Å | t | 0.02% |
| 500-10,000 Å | t , n | 0.05% / 0.0002 | |
| Nitride / Si | 200-10,000 Å | t | 0.02% |
| 500-10,000 Å | t , n | 0.05% / 0.0005 | |
| Polysilicon / Oxide / Si | 200-10,000 Å | t Poly , t Oxide | 0.2 Å / 0.1 Å |
| 500-10,000 Å | t Poly , t Oxide | 0.2 Å / 0.0005 | |