FilmTek 3000M

Micro-spot size Reflection and Transmission Spectrophotometry

Reflection and Transmission Spectrophotometry for film thickness measurement

The FilmTek™ 3000M combined reflection-transmission metrology system was developed for efficient and accurate measurement of patterned films deposited on transparent substrates. The FilmTek™ 3000M utilizes allows for a small spot size down to 2 µm, and can be equipped with a large custom stage for flat panel display applications.

Conventional optical metrology systems which utilize a high power objective for sub-15µm spot measurements are prone to significant signal degradation and optical artifacts, limiting their use for patterned samples, non-uniform films, and thick films. The patented optical design of FilmTek™ 3000M maintains high signal fidelity even during small spot measurements by allowing for a sub-10µm spot with a low power objective. Avoiding the use of a high power objective is critical for limiting the angular spectrum of the collected light and maximizing the coherence of both spectral reflection and transmission.

FilmTek™ 3000M capabilities can be expanded to perform fully-automated imaging-based critical dimension (CD) measurement of patterned samples. This option allows for simultaneous CD and film thickness measurement.

FilmTek™ 3000M is a fully-integrated package, with advanced material modeling software to make even the most rigorous of measurement tasks reliable and intuitive.

Key Features:

  • Spectroscopic reflection
  • Spectroscopic transmission
  • 5nm to 350µm film thickness range
  • 2µm spot size (5×10µm standard)
  • Automated stage with autofocus
  • Camera for imaging measurement location
  • Pattern recognition

Measurement Capabilities:

FilmTek™ 3000M incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Critical dimension (CD) measurement

Optional Features:

  • Automated flat panel/wafer handling
  • Flat panel total thickness variation (TTV) measurement
  • SECS/GEM

 

Technical Specifications
Film thickness range: 5nm to 350µm (5nm to 150µm is standard)
Film thickness accuracy: ±1.5Å for NIST traceable standard oxide 1000Å to 1µm
CD precision (1σ): <0.2%
Spectral range: 380nm to 1700nm ( 380nm to 1000nm is standard)
Measurement spot size: 2µm (5×10µm standard with 10x objective)
Sample size: 2mm to 600mm (150mm is standard)
Spectral resolution: 0.3-2nm
Light source: Regulated halogen lamp (2,000 hrs lifetime)
Detector type: 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Computer: Multi-core processor with Windows™ 7 Operating System
Measurement time: <1 sec per site (e.g., oxide film)

 

Performance Specifications
Film(s) Thickness Measured Parameters Precision (1σ)
Oxide / Si 50-1000 nm t 0.025 nm
1-150 µm
t 0.005%