FilmTek 2000M

Micro-spot Spectroscopic Reflectometry

Micro-spot Spectroscopic Reflectometry for film thickness measurement

The FilmTek™ 2000M micro-spot size benchtop metrology system is engineered for unparalleled versatility and high performance, meeting the needs of patterned film applications requiring a very small spot size. The FilmTek™ 2000M allows for measurement spot sizes as small as 2µm, and delivers reliable measurement of both thin and thick films.

Conventional optical metrology systems which utilize a high power objective for sub-15µm spot measurements are prone to significant signal degradation and optical artifacts, limiting their use for patterned wafers, non-uniform films, and thick films. The patented optical design of FilmTek™ 2000M maintains high signal fidelity even during small spot measurements by allowing for a sub-10µm spot with a low power objective. Avoiding the use of a high power objective is critical for limiting the angular spectrum of the collected light and maximizing the coherence of the spectral reflection.

FilmTek™ 2000M capabilities can be expanded to perform fully-automated imaging-based critical dimension (CD) measurement of patterned wafers. This option allows for simultaneous CD and film thickness measurement.

FilmTek™ 2000M is a fully-integrated package, with advanced material modeling software to make even the most rigorous of measurement tasks reliable and intuitive. Addition of an optional wafer auto-loader provides high-throughput, fully-automated mapping of patterned wafers.

Key Features:

  • 5nm to 350µm film thickness range
  • 2µm spot size (5×10µm standard)
  • Automated stage with autofocus
  • Camera for imaging measurement location
  • Pattern recognition

Measurement Capabilities:

FilmTek™ 2000M incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of:

  • Multiple layer thicknesses
  • Indices of refraction [ n(λ) ]
  • Extinction (absorption) coefficients [ k(λ) ]
  • Energy band gap [ Eg ]
  • Critical dimension (CD) measurement

Optional Features:

  • Automated wafer handling
  • SECS/GEM

 

Technical Specifications
Film thickness range: 5nm to 350µm (5nm to 150µm is standard)
Film thickness accuracy: ±1.5Å for NIST traceable standard oxide 1000Å to 1µm
CD precision (1σ): <0.2%
Spectral range: 380nm to 1700nm ( 380nm to 1000nm is standard)
Measurement spot size: 2µm (5×10µm standard with 10x objective)
Sample size: 2mm to 300mm (150mm is standard)
Spectral resolution: 0.3-2nm
Light source: Regulated halogen lamp (2,000 hrs lifetime)
Detector type: 2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Computer: Multi-core processor with Windows™ 7 Operating System
Measurement time: <1 sec per site (e.g., oxide film)

 

Performance Specifications
Film(s) Thickness Measured Parameters Precision (1σ)
Oxide / Si 50-1000 nm t 0.025 nm
1-150 µm
t 0.005%