Characterizing Phase Change Materials: GeSbTe (Germanium-Antimony-Tellurium or GST)
- Simultaneous measurement of GeSbTe thickness, index, and band gap energy.
- Fully characterize the highly absorbing GeSbTe film by measuring multiple-angle reflection and ellipsometric data from the deep UV through the near IR.
- Superior film characterization enables accurate and repeatable process monitoring.
GeSbTe (Amorphous) / Oxide / Silicon
GeSbTe (Crystalline) / Oxide / Silicon