Characterizing Phase Change Materials: GeSbTe (Germanium-Antimony-Tellurium or GST)

FilmTek™ Advantages

  • Simultaneous measurement of GeSbTe thickness, index, and band gap energy.
  • Fully characterize the highly absorbing GeSbTe film by measuring multiple-angle reflection and ellipsometric data from the deep UV through the near IR.
  • Superior film characterization enables accurate and repeatable process monitoring.

GeSbTe (Amorphous) / Oxide / Silicon

GeSbTe Thickness= 303.1 Å Oxide Thickness= 9486.8 Å

GeSbTe (Crystalline) / Oxide / Silicon

GeSbTe Thickness= 305.2 Å Oxide Thickness= 4991.5 Å