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FilmTek 4000EM-DUV
FilmTek CD
FilmTek 4000
FilmTek SE
FilmTek 3000
FilmTek 2000M TSV
FilmTek 2000
FilmTek 1000
FilmTek Solar
Integrated Metrology

 

 

 

FilmTek™ 2000, FilmTek™ 2000M, and FilmTek™ 2000 PAR

DUV Spectroscopic Reflectometry

 

FilmTek™ 2000 is a breakthrough in thin film metrology technology.  FilmTek™ 2000 combines a fiber-optic spectrophotometer with revolutionary material modeling software to provide an affordable and reliable tool for the simultaneous measurement of film thickness, index of refraction, and extinction coefficient.  FilmTek™ 2000 provides unmatched accuracy, ease of use, and analytical power in a fully integrated package.  Ideally suited for patterned device wafers, the FilmTek™ 2000M allows for measurement spot sizes as small as 2µm.  The FilmTek™ 2000 PAR utilizes SCI's patented parabolic mirror technology developed for the FilmTek™ 4000EM-DUV to measure wavelengths from the deep ultra-violet to the near infrared with a spot size as small as 13µm.

 


FilmTek™ 2000

 

 
FilmTek™ 2000M

 


FilmTek™ 2000 PAR

 


FilmTek™ 2000

 300mm Automated XY Stage

 

FilmTek™ 2000 Features

Versatile: FilmTek™ 2000 incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of:


- Multiple layer thicknesses
- Indices of refraction [ n(l ) ]
- Extinction (absorption) coefficients [ k(l ) ]
- Energy band gap [ Eg ]        
- Constituent and void fraction
- Surface roughness

Low Cost: The cost of ownership of FilmTek™ 2000 is a small fraction of comparable instruments.
No Special Knowledge Required: FilmTek™ 2000 software is designed so that minimal experience in personal computers, thin film optical design, or measurement techniques is required.
Complete "turn key" System: A fully integrated spectrophotometer measurement system with calibration, acquisition, and analysis software.
Non-contact and non-destructive.
Flexible: FilmTek™ 2000 hardware and software can be easily modified to satisfy unique customer requirements.
Optional features:

 

- Computer controlled automated stage
- Small spot size (2µm)
- Pattern recognition (Cognex)
- Cassette to cassette wafer handling

 

Applications

Virtually all translucent films ranging in thickness from less than 100 angstroms to approximately 150 microns can be measured with high precision. Typical applications include:


Semiconductor and dielectric materials Computer disks
Multilayer optical coatings Coated glass
Optical antireflection coatings Laser mirrors
Electro-optical materials Thin metals
Solar cells   Biomedical


Example Films

SiOx a-Si
SiNx a-C:H
DLC ITO
SOG         Polysilicon
Photoresist Polyimide
Thin metals Low k dielectric films


Example Substrates

Silicon GaAs
SOI Glass
SOS Aluminum
PET   Copper

 

 

 

FilmTek™ 2000 / 2000M / 2000 PAR Technical Specifications
Film thickness range:
3nm to 350µm (5nm to 150µm is standard)
Film thickness accuracy:
±1.5Ĺ for NIST traceable standard oxide 1000Ĺ to 1µm
Spectral range:
190nm to 1700nm (240nm to 1000nm is standard)
FilmTek™ 2000 measurement spot size:
2mm to 5mm (5mm standard)
FilmTek™ 2000M measurement spot size:

2µm to 50µm

FilmTek™ 2000 PAR measurement spot size:

13µm to 300µm (50µm standard)

Sample size:
2mm to 300mm standard
Spectral resolution:

0.3-2nm

Light source:
Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector type:
2048 pixel Sony linear CCD array / 512 pixel cooled Hamamatsu InGaAs CCD array (NIR)
Computer: Multi-core processor with Windows™ 7 Operating System
Measurement time:

<1 sec per site (e.g., oxide film)

Data acquisition time:
0.2 sec

 

Film(s) Thickness Measured Parameters Precision (1σ)
Oxide / Si 200-500 Ĺ t 0.5 Ĺ
500-10,000 Ĺ t 0.25 Ĺ
1000 Ĺ t, n 0.25 Ĺ / 0.001
Nitride / Si 200-10,000 Ĺ t 0.25 Ĺ
Photoresist / Si 200-10,000 Ĺ t 0.5 Ĺ
a-Si / Oxide / Si 20-10,000 Ĺ t 0.5 Ĺ

 

 

Methodology

FilmTek™ 2000 simultaneously solves for refractive index n(l), extinction coefficient k(l), and thicknesses of multi-layer film structures.  A self-consistent solution is obtained by using SCI’s generalized dispersion formula to model fitted values of the dielectric function e (l).  The SCI dispersion formula is quite general and applies to metallic, amorphous, crystalline, and dielectric materials (Figures 1-3).  This approach allows the user to model complex multi-layer structures with reflection/transmission data.  Global optimization methods are used to obtain the best solution while avoiding local minima and minimizing sensitivity to the user’s initial guess of fitted parameters (e.g., layer thickness).  FilmTek™ 2000 optimizes both the reflectance and power density spectrum (FFT) simultaneously.  This unique feature allows for accurate thickness determination over a wide range of thickness (3nm to 350µm).

 

 

 
Fig. 1 n and k spectra of Silicon
 
Fig. 2 n and k spectra of SiO2
 
Fig. 3 n and k spectra of Tantalum

Related Information

FilmTek™ 2000 Product Overview.pdf

 

 

 

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